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AUIRS2301S
Parameter Temperature Trends
Figures illustrated in this chapter provide information on the experimental performance of the AUIRS2301S HVIC.
The line plotted in each figure is generated from actual lab data. A large number of individual samples were tested
at three temperatures (-40 oC, 25 oC, and 125 oC) in order to generate the experimental curve. The line consists
of three data points (one data point at each of the tested temperatures) that have been connected together to
illustrate the understood trend. The individual data points on the Typ. curve were determined by calculating the
averaged experimental value of the parameter (for a given temperature).
300
250
200
M ax.
300
250
200
M ax.
150
100
Typ.
M in.
150 Typ.
M in.
100
-50
-25
0
25
50
75
100
125
-50
-25
0
25
50
75
100
125
Temperature ( C)
Temperature ( C)
150.0
125.0
100.0
o
Figure 5: T ON vs. temperature
75
60
45
o
Figure 6: T OFF vs. temperature
M ax.
M ax.
75.0
Typ.
30
Typ.
50.0
M in.
15
M in.
-50
-25
0
25
50
75
100
12 5
-50
-25
0
25
50
75
100
125
Temperature ( C)
Temperature ( C)
www.irf.com
o
Figure 7: T R vs. temperature
12
o
Figure 8: T F vs. temperature
? 2009 International Rectifier
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相关PDF资料
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相关代理商/技术参数
AUIRS2301STR
功能描述:功率驱动器IC High Low 600V DRVR 200mA 220ns 50ns RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
AUIRS2302S
功能描述:功率驱动器IC AUTO HALF BRDG DRVR 600V 5V to 20V 60ns RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
AUIRS2302STR
功能描述:功率驱动器IC AUTO HALF BRDG DRVR 600V 5V to 20V 60ns RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
AUIRS2332J
功能描述:功率驱动器IC AUTO HI VTG HI SPEED 600V 3-Phase 540ns RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
AUIRS2332JTR
功能描述:功率驱动器IC AUTO HI VTG HI SPEED 600V 3-Phase 540ns RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
AUIRS2334S
功能描述:功率驱动器IC Automotive HiSpd Pwr MOSFET & IGBT Driver RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
AUIRS2334STR
功能描述:功率驱动器IC Automotive HiSpd Pwr MOSFET & IGBT Driver
RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
AUIRS2336S
功能描述:功率驱动器IC 3-Phase Bridge DRVR 600V 200mA 275ns RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube